FU9N20D irfu9n20d equivalent, irfu9n20d.
Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Pow.
High frequency DC-DC converters
IRFR9N20D IRFU9N20D
HEXFET® Power MOSFET
l
VDSS
200V
RDS(on) max
0.38Ω
ID
9.4A
Ben.
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